• 专利附录
  • 专利说明
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    • 专利摘要:
    There is provided a chemical-mechanical polishing-felt containing a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer; and, a hardener system, containing a high molecular weight polyol hardener; and, a difunctional hardener.
    公开号:FR3020296A1
    申请号:FR1553630
    申请日:2015-04-23
    公开日:2015-10-30
    发明作者:Bainian Qian；Marty Degroot
    申请人:Rohm and Haas Electronic Materials CMP Holdings Inc；Dow Global Technologies LLC；Rohm and Haas Electronic Materials LLC；
    IPC主号:
    专利说明:

    [0001] The present invention relates to chemical mechanical polishing felts and methods of making and using them. The present invention more particularly relates to a chemical-mechanical polishing felt comprising a polishing layer, wherein the polishing layer has a density greater than 0.6 g / cm 3; a Shore D hardness of 40 to 60; an elongation at break of 125 to 300 ° A); a ratio G '30/90 of 1.5 to 4; a tensile modulus 10 from 100 to 300 (MPa); a wet cutting speed of 4 to 10 μm / h; a shrink rate of 300 mm TEOS at Shore D hardness (TEOS300_RR / Shore D hardness) 28; and wherein the polishing layer has a polishing surface adapted to polish a substrate. In the manufacture of integrated circuits and other electronic devices, multiple layers of conductive, semiconductor and dielectric materials are deposited on and removed from a surface of a wafer (known as "wafer"). ) semiconductor. Thin layers of conductive, semiconductive and dielectric materials can be deposited by many deposition techniques. Conventional deposition techniques in modern wafer processing include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and electro-chemical plating, among others. Typical shrinkage techniques include wet and dry isotropic and anisotropic pickling, among others. When the layers of materials are successively deposited and removed, the upper surface of the slab becomes non-planar. Since subsequent processing of the semiconductor (eg metallization) requires the wafer to have a flat surface, the wafer must be planarized. Planarization is useful for removing undesired surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice deterioration, scratches, and polluted layers or materials.
    [0002] Mechano-chemical planarization, or chemical mechanical polishing (CMP) is a conventional technique used to planarize or polish machined parts, such as semiconductor wafers. In a conventional CMP, a wafer carrier, or polishing head, is attached to a carrier assembly. The polishing head supports the wafer and positions the wafer in contact with a polishing layer of a polishing felt which is attached to a table or disk (or tray) in a CMP apparatus. The support assembly provides an adjustable pressure between the wafer and the polishing felt. A polishing medium (e.g. a suspension) is simultaneously dispensed onto the polishing felt and is drawn into the gap between the wafer and the polishing layer. The polishing felt and the wafer typically rotate relative to one another to effect polishing. When the polishing felt rotates below the wafer, the wafer scans a typically annular polishing path, or polishing region, in which the surface of the wafer is directly confronted with the polishing layer. The wafer surface is polished and made flat by the chemical and mechanical action of the polishing layer and the polishing medium on the surface. Felt surface "treatment" or "finishing" is critical to maintaining a consistent polishing surface for stable polishing performance. The polishing surface of the polishing felt wears over time, smoothing the microtexture of the polishing surface - a phenomenon called "glazing". The treatment of the polishing felt is typically accomplished by mechanical abrasion of the polishing surface with a treatment disk. The treatment disk has a rough treatment surface typically consisting of recessed diamond points. The treatment disk is brought into contact with the polishing surface either during intermittent interruptions in the CMP process when the polishing is quiescent ("ex situ"), or while the CMP process is in progress ("in situ" ). The treatment disk typically rotates in a position which is fixed relative to the axis of rotation of the polishing felt, and scans an annular treatment region as the polishing felt rotates. The treatment method, as described, cuts microscopic grooves into the polishing surface, abrading and planing both the felt material and renewing the polishing texture.
    [0003] Semiconductor devices are becoming more complex with finer aspects and more layers of metallization. This trend requires improved performance for polishing consumables in order to maintain planarity and limit polishing defects. These can create breaks or short circuits in electrical conductive lines that would make the semiconductor device not functional. It is generally known that an approach to reduce polishing defects, such as micro-scratches or machining marks, is to use a softer polishing felt.
    [0004] A family of flexible polyurethane polishing layers is described by James et al. in U.S. Patent 7,074,115. James et al. disclose a polishing felt comprising a reaction product of an isocyanate-terminated urethane prepolymer with an aromatic diamine or polyamine hardener, wherein the reaction product has a porosity of at least 0.1 volume percent, a loss factor of energy KEL at 40 ° C and 1 rad / s from 385 to 750 I / Pa, and a module E 'at 40 ° C and 1 rad / s from 100 to 400 MPa. As described above, it is necessary to diamond-treat the surface of chemical mechanical polishing felts to create an advantageous micro-texture for optimum polishing performance. However, it is difficult to create such a texture in conventional polishing layer materials, such as those described by James et al. since these materials have high ductility, as measured by tensile elongation values. As a result, when these materials are subjected to treatment with a diamond treatment disc, rather than a cut of furrows in the surface of the felt, the diamonds in the processing disc simply push the felt material to the side. without cutting. A very small texture is thus created in the surface of these conventional materials as a result of treatment with a diamond treatment disk. Another problem with these conventional chemical mechanical polishing felt materials occurs during the machining process to form macro-groove patterns in the felt surface. Conventional chemical mechanical polishing felts are typically provided with groove pattern cutting in their polishing surfaces to promote suspension flow and to remove polishing debris from the felt-wafer interface. Such grooves are frequently cut into the polishing surface of the polishing felt either by using a lathe or by a CNC grinding machine. With soft felt materials, however, a problem similar to that of a diamond treatment appears, such that after the cutting end is passed, the felt material simply connects and the formed grooves are closed again. on herself. The quality of the grooves is thus poor and it is more difficult to successfully manufacture commercially acceptable felts with such flexible materials. This problem becomes worse when the hardness of the felt material decreases. There is therefore a continuing need for chemical mechanical polishing felts that provide a physical property profile that correlates well with that associated with low-flaw formulations, but also imparts improved pol readability to the polishing layer. (i.e., has a cutting speed of 25 to 150 pm / h). The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5% by weight of unreacted NCO groups; and a hardener system comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, from 2,500 to 100,000; and wherein the high molecular weight polyol curing agent has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener. The present invention provides a chemical-mechanical polishing felt, comprising: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5% by weight of unreacted NCO groups; and a hardener system, comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, of 2,500 to 100,000; and wherein the high molecular weight polyol curing agent has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; and wherein the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. The present invention provides a chemical-mechanical polishing felt, comprising: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5 wt.% of unreacted NCO groups; and a hardener system, comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, of 2,500 to 100,000; and wherein the high molecular weight polyol curing agent has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; wherein the hardener system has a plurality of reactive hydrogen groups and the isocyanate-terminated urethane prepolymer has a plurality of unreacted NCO groups; and wherein the stoichiometric ratio of reactive hydrogen groups to unreacted NCO groups is from 0.85 to 1.15.
    [0005] The present invention provides a chemical-mechanical polishing felt, comprising: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5 wt.% of unreacted NCO groups; and a hardener system, comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, of 2,500 to 100,000; wherein the high molecular weight polyol hardener has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; and, wherein the polishing layer has a density greater than 0.6 g / cm 3; a Shore D hardness of 40 to 60; an elongation at break of 125 to 300%; a ratio G '30/90 of 1.5 to 4; a tensile modulus of 100 to 300 (MPa); a wet cutting speed of 4 to 10 μm / h; and a 300 mm shrinkage ratio of TEOS at Shore D hardness (TEOS300-RR / Shore D hardness) 28. The present invention provides a chemical-mechanical polishing felt, comprising: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: a terminal urethane prepolymer isocyanate having from 8.95 to 9.25 ° H by weight of unreacted NCO groups; and a hardener system, comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, of 2,500 to 100,000; wherein the high molecular weight polyol hardener has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; and, wherein the polishing layer has a density greater than 0.6 g / cm 3; a Shore D hardness of 40 to 60; an elongation at break of 125 to 300%; a ratio G '30/90 of 1.5 to 4; a tensile modulus of 100 to 300 (MPa); a wet cutting speed of 4 to 10 μm / h; and, a 300 mm shrinkage ratio of TEOS at Shore D hardness (TEOS300_RR / Shore D hardness) 28.
    [0006] The present invention provides a chemical-mechanical polishing felt, comprising: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5% by weight of unreacted NCO groups; and a hardener system comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, of 2 500 to 100,000; wherein the high molecular weight polyol hardener has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; and, wherein the polishing surface has a helical groove pattern formed therein; wherein the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.
    [0007] The present invention provides a method of manufacturing a chemical mechanical polishing felt according to the present invention, comprising: providing an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5% by weight of NCO groups that have not reacted; and, providing a hardener system, comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN from 2,500 to 100,000; and wherein the high molecular weight polyol curing agent has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; and, combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a polishing layer from the product; and, forming the chemical mechanical polishing felt with the polishing layer. According to a particular feature, this process further comprises: providing a plurality of microelements: wherein the plurality of microelements are combined with the isocyanate-terminated urethane prepolymer and the hardener system to form the combination. The present invention provides a method of manufacturing a chemical mechanical polishing felt according to the present invention, comprising: providing an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5 wt% of groups NCO who did not react; the supply of several micro-elements; and providing a hardener system comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight , MN, from 2,500 to 100,000; and wherein the high molecular weight polyol curing agent has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; and, the combination of the isocyanate-terminated urethane prepolymer, the plurality of microelements and the hardener system to form a combination; let it react from the combination to form a product; forming a polishing layer from the product; and, forming the chemical mechanical polishing felt with the polishing layer. The present invention provides a method of polishing a substrate, comprising: providing a chemical mechanical polishing apparatus having a disk; providing at least one substrate; providing a chemical mechanical polishing felt according to the present invention; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate. The present invention provides a method of polishing a substrate, comprising: providing a chemical mechanical polishing apparatus having a disk; providing at least one substrate, wherein the at least one substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; providing a chemical mechanical polishing felt according to the present invention; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate. DETAILED DESCRIPTION The chemical mechanical polishing felt of the present invention has a polishing layer that exhibits both an advantageous balance of physical properties that correlates well with low defect polishing performance and processability to facilitate formation. of a micro-texture using a diamond treatment disc, while maintaining a high polishing rate. The balance of properties enabled by the polishing layer of the present invention therefore provides the ability to polish, for example, semiconductor wafers at an effective speed without damaging the wafer surface by creating micro scratch defects. which would compromise the electrical integrity of the semiconductor device. The term "polishing medium" as used herein and in the appended claims includes polishing solutions containing particles and polishing solutions that do not contain particles, such as reactive and abrasive-free liquid polishing solutions. The term "TEOS300-RR / Shore D hardness" as used herein and in the appended claims is the ratio of the TEOS shrinkage rate to the Shore D hardness for a given polishing layer defined as follows: TEOS300-RR / Shore Hardness D = (TEOS300-RR) ÷ Shore D hardness where the TEOS300-RR is the TEOS removal rate in λ / min for the polishing layer measured according to the procedure given here below in the polishing examples; and Shore D hardness is the hardness of the polishing layer measured according to ASTM D2240. The term "ratio G '30/90" as used herein and in the appended claims is the ratio of shear modulus (at 30 ° C), G'30, to shear modulus (at 90 ° C), G'90 for a given polishing layer defined as follows: ratio G '30/90 = G'30 G'90 where G'30 and G'90 for the polishing layer are measured according to ASTM D5279-13 respectively at 30 ° C and 90 ° C. The chemical mechanical polishing felt of the present invention comprises: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5% by weight (preferably from 8.75 to 9.5%) by weight; still more preferably from 8.75 to 9.25 ° A) by weight; still more preferably from 8.95 to 9.25 ° A) by weight of unreacted NCO groups; and a hardener system, comprising: from 10 to 60% by weight (preferably from 15 to 50% by weight, more preferably from 20 to 40% by weight, most preferably from 20 to 30% by weight), a high molecular weight polyol curing agent having a number average molecular weight, MN, of 2,500 to 100,000 (preferably 5,000 to 50,000, more preferably 7,500 to 25,000, most preferably 10,000 at 12,000) and an average of from three to ten (preferably from four to eight, more preferably from five to seven, most preferably six) hydroxyl groups per molecule; and from 40 to 90% by weight (preferably from 50 to 85% by weight, more preferably from 60 to 80% by weight, most preferably from 70 to 80% by weight) of a difunctional hardener.
    [0008] The polishing surface of the polishing layer of the chemical mechanical polishing felt of the present invention is suitable for polishing a substrate. The polishing surface is preferably adapted to polish a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. The polishing surface is even more suitable for polishing a semiconductor substrate. The polishing surface is much more suitable for polishing a TEOS oxide surface of a semiconductor substrate. The polishing surface preferably has a macrotexture selected from at least one of perforations and grooves.
    [0009] The perforations may extend from the polishing surface partially or all through the thickness of the polishing layer. The grooves are preferably disposed on the polishing surface so that upon rotation of the chemical mechanical polishing felt during polishing, at least one groove sweeps the surface of the substrate which is polished. The polishing surface preferably has a macro-texture comprising at least one groove selected from the group consisting of curved grooves, linear grooves and combinations thereof. The polishing layer of the electrochemical polishing felt of the present invention preferably has a polishing surface with a macro-texture comprising a pattern of grooves formed therein. The groove pattern preferably comprises a plurality of grooves. The groove pattern is even better selected from a groove design. The groove design is preferably selected from the group consisting of concentric grooves (which may be circular or helical), curved grooves, hatched grooves (for example arranged as an XY grid across the felt surface), others regular designs (eg hexagons, triangles), tire tread type patterns, irregular designs (eg fractal patterns), and combinations thereof. The groove design is even more preferred in the group consisting of arbitrary grooves, concentric grooves, helical grooves, hatched grooves, XY grid grooves, hexagonal grooves, triangular grooves, fractal grooves, and combinations of those -this. The polishing surface even more preferably has a helical groove pattern formed therein. The groove profile is preferably selected from a rectangular profile with straight side walls or the cross section of grooves may be "V" shaped, "U" shaped, sawtooth, and combinations thereof.
    [0010] The isocyanate-terminated urethane prepolymer used in the formation of the chemical-mechanical polishing felt of the present invention preferably comprises: an ingredient reaction product comprising a polyfunctional isocyanate and a prepolymer polyol. The polyfunctional isocyanate used is preferably selected from the group consisting of a polyfunctional aliphatic isocyanate, a polyfunctional aromatic isocyanate, and a mixture thereof. The polyfunctional isocyanate is even better a diisocyanate selected from the group consisting of 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 4,4'-diphenylmethane diisocyanate; naphthalene-1,5-diisocyanate; tolidine diisocyanate; para-phenylene diisocyanate; xylylene diisocyanate; isophorone diisocyanate; hexannethylene diisocyanate; 4,4'-dicyclohexylmethane diisocyanate; cyclohexane diisocyanate; and mixtures thereof.
    [0011] The prepolymer polyol is preferably selected from the group consisting of diols, polyols, polyol diols, copolymers thereof, and mixtures thereof. The prepolymer polyol is even more preferably selected from the group consisting of polyether polyols (for example poly (oxytetramethylene) glycol, poly (oxypropylene) glycol, poly (oxyethylene) glycol, polycarbonates polyols, polyesters polyols, polycaprolactones polyols; mixtures thereof, and mixtures thereof with one or more low molecular weight polyols selected from the group consisting of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol and tripropylene glycol The prepolymer polyol is more preferably selected from the group consisting of at least one of polytetramethylene ether glycol (PTMEG), polypropylene ether glycols (PPG), and polyethylene ether glycols. (P EG), optionally mixed with at least one low molecular weight polyol selected from the group consisting of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and tripropylene glycol. The prepolymer polyol is still more preferably (i.e., 90% by weight) PTMEG. The isocyanate-terminated urethane prepolymer preferably has an unreacted isocyanate (NCO) concentration of from 8.5 to 9.5% by weight (preferably from 8.75 to 9.5% by weight; still more preferably from 8.75 to 9.25% by weight, most preferably from 8.95 to 9.25% by weight). Examples of commercially available isocyanate-terminated urethane prepolymers include Imuthane ™ prepolymers (available from COIM USA, Inc., such as PET-80A, PET-85A, PET-90A, PET-93A, PET-95A, PET-60D, PET-70D, PET-75D); AdipreneC prepolymers (available from Chemtura, such as LF 800A, LF 900A, LF 910A, LF 930A, LF 931A, LF 939A, LF 950A, LF 952A, LF 600D, LF 601D, LF 650D, LF 667, LF 700D, LF 750D, LF751D, LF752D, LF753D and L325); AndurC prepolymers) (available from Anderson Development Company, such as 70APLF, 80APLF, 85APLF, 90APLF, 95APLF, 60DPLF, 70APLF, 75APLF). The isocyanate-terminated urethane prepolymer is preferably an isocyanate-terminated urethane prepolymer having a free toluene diisocyanate (TDI) monomer content of less than 0.1% by weight.
    [0012] The hardener system used in forming the polishing layer of the chemical mechanical polishing felt of the present invention contains: from 10 to 60% by weight (preferably from 15 to 50% by weight, more preferably from 20 to 40% by weight) % by weight, most preferably 20 to 30% by weight) of a high molecular weight polyol hardener; and from 40 to 90% by weight (preferably from 50 to 85% by weight, more preferably from 60 to 80% by weight, more preferably from 70 to 80% by weight) of a difunctional hardener. The high molecular weight polyol curing agent preferably has a number average molecular weight, MN, of 2,500 to 100,000. The high molecular weight polyol curing agent even more preferably has a number average molecular weight, MN, of 5,000. at 50,000 (even more preferably from 7,500 to 25,000, particularly preferably from 10,000 to 12,000).
    [0013] The high molecular weight polyol curing agent preferably has an average of three to ten hydroxyl groups per molecule. The high molecular weight polyol hardener is even more preferably from four to eight (most preferably from five to seven, particularly preferably six) hydroxyl groups per molecule.
    [0014] Examples of commercially available high molecular weight polyol curing agents include Specflex (C) polyols, Voranol (C) polyols and Voralux () polyols (available from The Dow Chemical Company); Multrano10 Specialty Polyols and UltraceIC) Flexible Polyols (available from Bayer MaterialScience LLC); and PlucarolC) Polyols (available from BASF). Many preferred high molecular weight polyol curatives are listed in TABLE 1.
    [0015] TABLE 1 Mass Polyol Hardener Number of MN High Molecular Hydroxyl Number OH Groups by (mg KOH / g) Molecular Polyol Multranol® 3901 3.0 6,000 28 Polyol PluracolC) 1385 3.0 3,200 50 Polyol Pluracol® 380 3.0 6,500 25 Polyol PluracolC) 1123 3,0 7,000 24 Polyol ULTRACEL® 3000 4,0 7,500 30 Polyol SPECFLEXC) NC630 4,2 7,602 31 Polyol SPECFLEX® NC632 4,7 8,225 32 Polyol VORALUX® HF 505 6,0 11,400 30 Polyol MULTRANOLC ) The difunctional hardener is preferably selected from diols and diamines. The difunctional hardener used is even better a diamine selected from the group consisting of primary amines and secondary amines. The difunctional hardener used is even more preferably selected from the group consisting of diethyltoluenediamine (DETDA); 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof (e.g., 3,5-diethyltoluene-2,6-diamine); 4,4'-bis (sec-butylamino) diphenylmethane; 1,4-bis (sec-butylamino) benzene; 4,4'-methylene-bis- (2-chloroaniline); 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline) (MCDEA); poly (tetramethylene oxide) -di-paminobenzoate; N, NP-dialkyldianninodiphenylmethane; p, p'-methylenedianiline (MDA); m-phenylenediamine (MPDA); 4,4'-methylene-bis- (2-chloroaniline) (MBOCA); 4,4'-methylene-bis- (2,6-diethylaniline) (MDEA); 4,4'-methylene-bis- (2,3-dichloroaniline) (MDCA); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyldiphenylmethane; 2,2 ', 3,3'-tetrachlorodiaminodiphenylmethane; trimethylene glycol di-p-aminobenzoate; and mixtures thereof. The diamine curing agent is most preferably selected from the group consisting of 4,4'-methylene-bis- (2-chloroaniline) (MBOCA); 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline) (MCDEA); and isomers thereof.
    [0016] The sum of the reactive hydrogen groups (i.e., the sum of the amine (NH2) and hydroxyl (OH) groups) contained in the components of the hardener system (i.e., the polyol hardener high molecular weight and the difunctional hardener) divided by the unreacted isocyanate groups (NCO) in the isocyanate-terminated urethane prepolymer (i.e., the stoichiometric ratio) used in the formation of the The polishing layer of the chemical mechanical polishing felt of the present invention is preferably from 0.85 to 1.15 (more preferably from 0.85 to 1.05, most preferably from 0.85 to 1.0). The polishing layer of the polishing felt of the present invention optionally further comprises a plurality of microelements. The plurality of microelements are preferably uniformly dispersed throughout the polishing layer. The plurality of microelements are preferably selected from entrapped gas bubbles, hollow core polymer materials, liquid filled hollow core polymeric materials, water soluble materials, and insoluble phase material (eg, oil). mineral). The multiple microelements are even more preferably selected from entrapped gas bubbles and hollow core polymer materials uniformly distributed across the polishing layer. The plurality of microelements preferably have a mass average diameter of less than 150 μm (more preferably less than 50 μm, more preferably 10 to 50 μm). The plurality of microelements preferably comprise polymeric microballoons with shell walls of either polyacrylonitrile or a polyacrylonitrile copolymer (eg Expancel® microspheres from Akzo Nobel). The plurality of micronutrients are preferably incorporated into the polishing layer at a porosity of 0 to 35% by volume (more preferably a porosity of 10 to 25% by volume).
    [0017] The polishing layer of the electrochemical polishing felt of the present invention can be provided in both porous and non-porous (i.e., unfilled) configurations. The polishing layer of the chemical mechanical polishing felt of the present invention preferably has a density of 0.6 g / cm 3 measured according to ASTM D1622. The polishing layer of the chemical mechanical polishing felt of the present invention further has a density of 0.7 to 1.1 g / cm 3 (more preferably 0.75 to 1.0 g / cm 3; 0.75 to 0.95 g / cm 3) measured according to ASTM D1622. The polishing layer of the electrochemical polishing felt of the present invention preferably has a Shore D hardness of 40 to 60 measured according to ASTM D2240. The polishing layer of the chemical mechanical polishing felt of the present invention further has a Shore D hardness of 45 to 55 (more preferably 50 to 55) measured according to ASTM D2240.
    [0018] The polishing layer of the electrochemical polishing felt of the present invention preferably has an elongation at break of 125% at 300 ° h (more preferably 140 to 300 ° A), more preferably 150 to 200 ° / 0. ) measured according to ASTM D412. The polishing layer of the chemical-mechanical polishing felt of the present invention preferably has a wet cutting rate of 4 to 10 μm / min measured using the method described herein in the Examples. The polishing layer of the chemical mechanical polishing felt of the present invention further has a wet cutting speed of 4.5 to 7 μm / min (more preferably 4.5 to 6 μm / min; 5 to 5.5 pm / min) measured using the method described herein in the Examples. The polishing layer of the chemical-mechanical polishing felt of the present invention preferably has a shear modulus (at 30 ° C), G'30, of 50 to 250 MPa (more preferably 50 to 200 MPa, much better still from 100 to 200 MPa) measured according to ASTM D5279-13. The polishing layer of the chemical mechanical polishing felt of the present invention preferably has a shear modulus (at 40 ° C), G'40, of 45 to 200 MPa measured according to ASTM D5279-13. The polishing layer of the chemical mechanical polishing felt of the present invention preferably has a shear loss modulus (at 40 ° C), G "40, of 3 to 20 MPa measured according to ASTM D5279-13. The polishing of the chemical-mechanical polishing felt of the present invention preferably has a ratio G '30/90 of 1.5 to 4 (more preferably 2 to 4) measured according to ASTM D527913. The polishing layer of the polishing felt The chemical mechanical system of the present invention preferably has a toughness of from 20 to 70 MPa (more preferably 20 to 50 MPa, more preferably 25 to 40 MPa) measured according to ASTM D1708-10. The chemical mechanical polishing of the present invention preferably has a tensile strength of 10 to 35 MPa (more preferably 15 to 30 MPa, more preferably 15 to 25 MPa) measured according to ASTM D 1708-10. polishing layers with high values of al Long time at break tend to reversibly deform when subjected to machining operations, resulting in unacceptably poor groove formation and texture creation during the diamond treatment which is insufficient. The unique hardener system used in forming the polishing layer of the chemical mechanical polishing felt of the present invention provides both a Shore D hardness of 40 to 60 coupled with an elongation at break of 125 to 300%. measured according to ASTM D412. The polishing layer of the chemical mechanical polishing felt of the present invention preferably has both a Shore D hardness of 40 to 60 (preferably 45 to 55, more preferably 50 to 55) and an elongation at rupture of 140 to 300% (preferably 150 to 300%, more preferably 150 to 200%) measured according to ASTM D412. Softer polishing layer materials tend to polish substrates at a lower speed than the harder polishing layer materials. However, the softer polishing layer materials tend to create less polishing defect than the harder polishing layer materials. The unique hardener system used in forming the polishing layer of the chemical mechanical polishing felt of the present invention provides a TEOS300-RR / Shore D hardness 28 (preferably 28 to 100, more preferably 30 to 100). 60, and even more preferably 30 to 50), where the TEOS300-RR / Shore D hardness is measured under the conditions given here in the examples.
    [0019] The polishing layer preferably has an average thickness of 20 to 150 thousandths of an inch. The polishing layer even more preferably has an average thickness of 30 to 125 thousandths of an inch (more preferably 40 to 120 thousandths of an inch, more preferably 50 to 100 thousandths of an inch). The chemical mechanical polishing felt of the present invention is preferably adapted to be assembled with a disk of a polishing machine. The chemical mechanical polishing felt is preferably adapted to be attached to the disk of the polishing machine.
    [0020] The chemical mechanical polishing felt may preferably be attached to the disk using at least one of a pressure sensitive adhesive and vacuum. The chemical-mechanical polishing felt of the present invention optionally further comprises at least one additional layer assembled with the polishing layer. The chemical mechanical polishing felt of the present invention optionally further comprises a compressible base layer adhered to the polishing layer. The compressible base layer preferably improves the compliance of the polishing layer on the surface of the substrate which is polished. An important step in the substrate polishing operations is the determination of a process end point. A conventional in situ method for limit point detection involves providing a polishing felt with a window, which is transparent to select wavelengths of light. During polishing, a light beam is directed through the window to the substrate surface, where it is reflected and passes back through the window to a detector (for example a spectrophotometer). On the basis of the feedback signal, properties of the substrate surface (e.g. film thickness on its top) can be determined for the detection of the limit point. In order to facilitate such limit point processes on the basis of light, the chemical mechanical polishing felt of the present invention further optionally includes a limit point detection window. The limit point detection window is preferably selected from an integral window incorporated in the polishing layer; and, a stop-in-place limit point detection window block incorporated in the chemical mechanical polishing felt. Those skilled in the art will be able to choose a suitable construction material for the endpoint detection window for use in the projected polishing process. The method for producing a chemical-mechanical polishing felt preferably comprises: providing an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5% by weight (preferably 8.75% by weight); at 9.5 wt%, more preferably 8.75 to 9.25 wt%, most preferably 8.95 to 9.25 wt%) of unreacted NCO groups. ; and, providing a hardener system, comprising: (i) providing from 10 to 60% by weight (preferably from 15 to 50% by weight, more preferably from 20 to 40% by weight; still 20 to 30% by weight) of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, of 2,500 to 100,000 (preferably 5,000 to 50,000, even better from 7,500 to 25,000, and even better from 10,000 to 12,000); and wherein the high molecular weight polyol curative has an average of from three to ten (preferably from four to eight, more preferably from five to seven, most preferably six) hydroxyl groups per molecule; and, (ii) providing from 40 to 90% by weight (preferably from 50 to 85%) by weight; still more preferably 60 to 80% by weight; more preferably 70 to 80% by weight) of a difunctional hardener; combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a polishing layer from the product; and, forming the chemical mechanical polishing felt with the polishing layer. The method of manufacturing a chemical mechanical polishing felt of the present invention, optionally further comprises: providing a plurality of microelements; and wherein the plurality of microelements are combined with the isocyanate-terminated urethane prepolymer and the hardener system to form a combination. The method of manufacturing a chemical-mechanical polishing felt of the present invention optionally further comprises: providing a mold; pouring the suit into the mold; and allowing it to react with the combination in the mold to form a hardened cake; wherein the polishing layer is produced from the cured cake. The cured cake is preferably sliced to obtain multiple polishing layers from a single cured cake. The method further optionally comprises heating the cured cake to facilitate the slicing operation. The cured cake is preferably heated using infrared heating lamps during the slicing operation in which the cured cake is sliced into several polishing layers.
    [0021] The method of manufacturing the chemical-mechanical polishing felt of the present invention further optionally comprises: providing at least one additional layer; and, assembling the at least one additional layer with the polishing layer to form the chemical mechanical polishing felt. The at least one additional layer is preferably bonded to the polishing layer by known techniques, such as using an adhesive (eg pressure sensitive adhesive, hot melt adhesive, contact adhesive). The method of manufacturing the chemical-mechanical polishing felt of the present invention further optionally includes: providing a limit point detection window; and, incorporating the boundary point detection window into the chemical mechanical polishing felt. The method of the present invention for mechanochemical polishing of a substrate preferably comprises: providing a mechanical-chemical polishing apparatus having a disk; providing at least one substrate to be polished (wherein the substrate is preferably selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; wherein the substrate is even better a substrate semiconductor, where the substrate is much better still a semiconductor wafer with an exposed TEOS surface); providing a chemical mechanical polishing felt of the present invention; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between a polishing surface of the chemical mechanical polishing felt and the substrate (wherein the polishing medium is preferably selected from the group consisting of a polishing slurry and a a reactive liquid formulation containing no abrasive); creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, optionally, treating the polishing surface with an abrasive treating agent. The chemical mechanical polishing apparatus provided further preferably comprises in the method of the present invention a light source and a photosensor (preferably an infrared spectrograph); and the chemical mechanical polishing felt further comprises a limit point detection window; and, the method further comprises: determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the reflected light from the surface of the substrate back through the boundary point detection window incidentally on the photosensor. Some embodiments of the present invention will now be described in detail in the following examples.
    [0022] Comparative Examples C1-C9 and Examples 1-14 Polishing layers were prepared according to the details of the formulations provided in TABLE 2. Polyurethane cakes were specifically prepared by the controlled mixture of the 51 isocyanate-terminated urethane prepolymer. ° C with the constituents of the hardener system. All raw materials, except MBOCA, were maintained at a pre-mix temperature of 51 ° C. MBOCA was maintained at a pre-mixing temperature of 116 ° C. The ratio of isocyanate-terminated urethane prepolymer to hardener system was set so that stoichiometry, defined as the ratio of reactive hydrogen groups (i.e. the sum of -OH groups and -NH 2 groups ) in the hardeners of the unreacted isocyanate group (NCO) hardener system in the isocyanate-terminated urethane prepolymer was that shown in TABLE 2.
    [0023] Porosity was introduced into the polishing layers by adding Expancel® microspheres to the isocyanate-terminated urethane prepolymer prior to combining with the hardener system to achieve the desired porosity and felt density. The quality of the Expancel® microspheres added in each of the Comparative Examples C1-C9 and Examples 1-14 is listed in TABLE 2 with the amount of the pore-forming agent added in% by weight. Expancel® microspheres are available from Akzo Nobel. The isocyanate-terminated urethane prepolymer with the incorporated Expancel® microspheres and the hardener system were mixed together using a high shear mixing head. At the outlet of the mixing head, the combination was dispensed over a period of 2 to 5 minutes in a circular mold 86.4 cm (34 inches) in diameter to provide a total pouring thickness of 7 to 10 cm. The dispensed combination was allowed to gel for 15 minutes before placing the mold in a curing oven. The mold was then cured in the curing oven using the following cycle: ramp 30 minutes from room temperature to a set point of 104 ° C, then hold for 15.5 hours at 104 ° C, and then 2 hour ramp from 104 ° C to 21 ° C. The cured polyurethane cakes were then removed from the mold and sliced (cut using a moving blade) at a temperature of 30 to 80 ° C in approximately forty separate sheets of thickness 2.0 mm (80 thousandths of an inch). Slicing was initiated from the top of each cake. Incomplete leaves were discarded. TABLE 2 Ex No.% NCO Urethane Prepolymer Hardener System (Active H / NCO) Porosity Agent Stoic Isocyanate Terminator Agent. Expancel pore formation ° (0 ° / 0 in pore formation) (° / 0 by weight) DC hardener Voralux @ HF 505 (° / 0 in weight) difunctional (° / 0 in (DC) weight) Cl Adiprene @ L325 9.1 MbOCA 100 - 0.87 551DE40d42 1.70 32 C2 Adiprene @ LF750D 8.9 MbOCA 100 - 1.05 551DE20d60 1.10 19 C3 Adiprene @ LFG740D 8.9 MbOCA 100 - 0.91 551DE40d42 0 , 19 9 C4 Combination 50/50% in 7.3 MbOCA 100 - 0.97 551DE20d60 2.00 31 weight of Adiprene @ LF750D and Adiprene @ LFG963D C5 80/20% combination in 8.3 MbOCA 100 - 0.89 461DE20d70 2.59 31 weight of Adiprene @ LF750D and Adiprene @ LFG963D C6 70/30% combination in 7.9 MbOCA 100 - 0.89 461DE20d70 2.59 31 weight of Adiprene @ LF750D and d Adiprene @ LFG963D C7 Combination 50/50% in 7.3 MbOCA 100 - 0.87 461DE20d70 2.85 32 weight of Adiprene @ LF750D and Adiprene @ LFG963D C8 Adiprene @ LFG963A 5.7 MCDEA 100 - 1 , 03 461DE20d70 2.06 27 C9 Adiprene @ LFG963A 5.7 MbOCA 100 - 0.90 551DE40d42 1.25 25 1 i 9.1 MbOCA 42.2 57.8 0.87 461DE20d70 2.48 30 Adprene @ L325 2 Adiprene @ L325 9.1 MbOCA 42.5 57.5 0.87 461DE20d70 1.38 21 3 Adprene @ L325 i 9.1 MbOCA 49.6 50.4 0.87 461DE20d70 2.58 31 4 Adiprene @ L325 9.1 MbOCA 50 , 0 50.0 0.87 461DE20d70 1.41 23 5 Adiprene @ L325 9.1 MbOCA 53.5 46.5 1.05 461DE20d70 2.48 29 Ex No. Urethane prepolymer at% NCO Hardener system NCO Agent of Porosity Agent isocyanate terminations (H active /) Pore formation Expansion of formation of (° / 0 in stoech. pore vol) (° / 0 by weight) Difunctional DC ® hardener (° / 0 in Voralux HF 505 (DC) weight) (0/0 by weight) 6 Adiprene @ L325 9.1 MbOCA 53.9 46.1 1, 05 461DE20d70 1.42 20 7 Adiprene ° L325 9.1 MbOCA 58.6 41.4 0.87 461DE20d70 2.69 30 8 Adiprene @ L325 9.1 MbOCA 59.0 41.0 0.87 461DE20d70 1.45 19 9 Adprenee L325 i 9.1 MbOCA 62.3 37.7 1.05 461DE20d70 2.59 31 10 Adiprene @ L325 9.1 MbOCA 62.6 37.4 1.05 461DE20d70 1.47 24 11 Adiprene® L325 9 1 MbOCA 75.0 25.0 0.87 461DE20d70 2.85 32 12 Adiprene8 L325 9.1 MbOCA 77.7 22.3 1.05 461DE20d70 2.74 30 13 Adiprene @ L325 9.1 MbOCA 77.9 22, 1 1.05 461DE20d70 1.50 23 14 Adiprenee L325 9.1 MbOCA 86.2 13.8 0.87 461DE20d70 2.94 33 The isocyanate-terminated urethane prepolymer Adiprene @ L325 is available from Chemtura Corporation. The isocyanate-terminated urethane prepolymer Adiprene @ LF750D is available from Chemtura Corporation. The isocyanate-terminated urethane prepolymer Adiprene @ LFG740D is available from Chemtura Corporation. The isocyanate-terminated urethane prepolymer Adiprene @ LFG963A is available from Chemtura Corporation. The high molecular weight polyol hardener Voralux @ HF505 having a number average molecular weight, MN, of 11,400 and an average of six hydroxyl groups per molecule is available from The Dow Chemical Company.
    [0024] The materials of the non-grooved polishing layers were analyzed for each of the Comparative Examples C1-C9 and Examples 1-14 to determine their physical properties as listed in TABLE 3. It is noted that the density data cited were determined according to ASTM D1622; quoted Shore D hardness data were determined according to ASTM D2240; and, the cited elongation data were determined according to ASTM D412. The shear modulus, G ', and the shear loss modulus, G ", of the polishing layers were measured according to ASTM D5279-13 using a TA Instruments ARES Rheometer with torsion fixings. was connected to the instrument was used for control under ambient temperature The linear viscoelastic response of the samples was measured at a test frequency of 1 Hz with a temperature ramp of 3 ° C / min of -100 ° C at 200 ° C. The test samples were die-cut from the polishing layers produced using a 47.5 mm x 7 mm die on an Indusco oscillating hydraulic arm cutting machine and then cut to a minimum. at a length of approximately 35 mm using scissors.
    [0025] The cutting speed data cited in TABLE 3 was measured using a Buehler Ecomet® 4 polishing tool equipped with an Automet® 2 motor block. The polishing tool is developed to house a circular chemical mechanical polishing felt having a nominal diameter of 22.86 cm (9 inches). The polishing layers having a circular cross section were prepared as described herein in the Examples. The polishing layers were attached to the polishing disc of the polishing device using a double-sided pressure-sensitive adhesive film. An LPX-AR3B66 diamond treatment disc (LPX-W) (commercially available from Seasol Diamond Ind. Co., Ltd.) and a diamond treatment disc AMO2BSL8031C1-PM (AK45) (also commercially available from Seasol Diamond Ind. Co., Ltd.) were used to abrade the polishing surface of the polishing layers mentioned in TABLE 3 using the following processing conditions: the polishing surface of the polishing layers was abraded continuous from the diamond treatment disk for a period of 99 minutes, with a disk speed of 180 rpm, a deionized water flow rate of 280 ml / min and a downward force of the treatment disk of 55.16 kPa (8 psi). Cutting speed was determined by measuring the change in polishing layer thickness over time. The polishing layer thickness change was measured (in pm / min) using a Microtrack II Laser Triangulation Sensor MTI attached to a Zaber Technologies Motorized Slide to profile the polishing surface of each polishing layer from the center. towards the outer edge. The scanning speed of the sensor on the slide was 0.732 mm / s and the sampling rate (measurements / mm scan) for the sensor was 6.34 dots / mm. The cutting speed quoted in TABLE 3 is the average arithmetic reduction of the polishing layer thickness over time, based on the collected thickness measurements taken for> 2,000 points across the polishing surface of the polishing layer. EXAMPLE 3 Density Hardness G 'to G' to G "to G 'to 30 ° C / Resistance Elongation Module Toughness Speed No. (g / cm3) Shore D 30 ° C 40 ° C 40 ° Cg' to 90 ° C to tensile breaking tensile (MPa) cutting (15s) (MPa) (MPa) (MPa) (MPa) (MPa) (cyo) (MPa) wet (pm / h) LPX-W AK45 Cl 0.80 59 153 130 13.0 3.4 22.1 124 206 24 - --- C2 0.95 60 153 122 15.0 3.3 30.6 199 303 --- 3.7 2.8 C3 1, 07 63 230 199 17.0 2.2 --- --- --- --- 3.9 2.8 C4 0.82 50 105 92 8.6 2.7 18.8 230 185 35 4.9 - C5 0.82 58 --- --- --- --- --- --- --- --- --- --- C6 0.82 53 --- --- --- --- --- --- --- --- --- --- --- C7 0.80 51 --- --- --- --- --- --- - --- - - --- C8 0.86 46 87 81 5.5 1.7 17.9 470 172 63 --- --- C9 0.88 41 64 49 3.2 1.9 14.9 293 95 32 2, 5 3.2 1 0.83 44 73 64 6.1 2.3 15.3 223 129 42 6.7 6.3 2 0.93 49 80 69 7.1 2.2 19.8 290 138 26 - - --- 3 0.82 47 88 77 6.8 2.6 17.6 238 149 33 6.2 --- 4 0.91 52 99 86 7.8 2,4 22.3 247 164 41 - - - 5 0.84 49 103 89 9.3 2.7 17.2 231 188 33 --- --- 6 0.94 54 123 10 6 10.6 2.7 22.7 294 207 52 --- --- 7 0.83 50 105 92 8.7 2.6 19.5 211 173 33 5.9 6.7 8 0.95 54 126 107 10.2 2.6 23.6 237 193 43 5.1 --- 9 0.82 51 182 155 13.0 3.3 19.0 243 192 37 --- --- 10 0.90 53 144 123 12.2 3.1 23.5 280 230 51 --- --- 11 0.80 52 140 119 12.0 3.0 20.7 184 199 31 4.9 6.6 12 0.93 53 174 148 15.5 3.3 20.3 205 223 35 --- --- 13 0.91 57 165 136 15.4 3.8 25.0 259 272 52 --- --- 14 0.79 54 154 131 12.6 3.1 21.8 147 222 26 5.0 5.7 Polishing Experiments Mechano-chemical polishing felts were constructed using the polishing layers prepared according to the examples as given in TABLE 4. The polishing layers were then machine-grooved to provide a pattern of grooves in the polishing surface comprising a plurality of concentric circular grooves having the dimensions of a pitch of 70 mil (1.78 mm), 20 thousandths of an inch (0.51 mm) and a depth of 30 thousandths of an inch (0.76 mm). The polishing layers were then laminated into an expanded underfelt layer (FSP 350 available from Rohm and Haas Electronic Materials CMP Inc.). An Applied Materials Reflexion LK ° CMP polishing pad was used to polish 300 mm TEOS (oxide) 3S2OKTEN control wafers available from Novellus Systems, Inc. with the aforementioned mechanical-chemical polishing felts. The polishing medium used in the polishing experiments was a CES333F polishing slurry (1: 2 dilution ratio with deionized water) (commercially available from Asahi Glass Company). The polishing conditions used in all polishing experiments included a disk speed of 92 rpm; a support speed of 93 rpm; with a polishing medium flow rate of 250 ml / min and a downward force of 20.7 kPa. An I-PDA31G-3N diamond treatment disc (commercially available from Kinik Company) was used to treat the mechano-chemical polishing felts. The mechano-chemical polishing felts were each broken with the ex situ treatment agent using a 7.5 pounds (3.40 kg) downforce for 40 minutes. In addition, the ex situ polishing pens were treated prior to polishing using a 7.5 pounds (3.40 kg) downforce for 18 seconds. Shrinkage rates were determined by measuring the film thickness before and after polishing using a KLA-Tencor FX200 metrology tool using a 49-point helical scan with an edge exclusion of 3 mm. The results of the withdrawal rate experiments are provided in TABLE 4.
    [0026] TABLE 4 Speed Layer of TEOS300_RR / Shore D Hardness (Â / min) TEOS Removal Polishing Example No. (Â / min) Cl 1518 25.73 C7 1401 27.47 2365 48.27 6 1696 31.41 9 2149 42.14 1495 28.21 11 1780 34.23 12 2633 49.68 13 1986 34.84
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A chemical mechanical polishing felt characterized in that it comprises: a polishing layer having a polishing surface, wherein the polishing layer comprises an ingredient reaction product comprising: an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5 ° h of unreacted NCO groups; and a hardener system comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN, of 2,000 to 100,000; and wherein the high molecular weight polyol curing agent has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener.
    [0002]
    The chemical mechanical polishing mat according to claim 1, characterized in that the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. driver.
    [0003]
    A chemical mechanical polishing pen according to claim 1, characterized in that the hardener system has a plurality of reactive hydrogen groups and the isocyanate-terminated urethane prepolymer has a plurality of unreacted NCO groups; and wherein the stoichiometric ratio of reactive hydrogen groups to unreacted NCO groups is from 0.85 to 1.15.
    [0004]
    4. The chemical-mechanical polishing felt according to claim 1, characterized in that the polishing layer has a density greater than 0.6 g / cm3; a Shore D hardness of 40 to 60; an elongation at break of 125 to 300%; a ratio G '30/90 of 1.5 to 4; a tensile modulus of 100 to 300 (MPa); a wet cutting speed of 4 to 10 μm / h; and a 300 mm shrinkage ratio of TEOS at Shore D hardness (TEOS300-RR / Shore D hardness) 28.
    [0005]
    The chemical mechanical polishing felt according to claim 4, characterized in that the isocyanate-terminated urethane prepolymer has from 8.95 to 9.25% of unreacted NCO groups.
    [0006]
    The chemical mechanical polishing felt according to claim 2, characterized in that the polishing surface has a pattern of heliocidal grooves formed therein.
    [0007]
    7. A process for producing a chemical-mechanical polishing felt according to claim 1, characterized in that it comprises: providing an isocyanate-terminated urethane prepolymer having from 8.5 to 9.5% by weight weight of unreacted NCO groups; and, providing a hardener system, comprising: from 10 to 60% by weight of a high molecular weight polyol hardener, wherein the high molecular weight polyol hardener has a number average molecular weight, MN from 2,000 to 100,000; and wherein the high molecular weight polyol curing agent has an average of 3 to 10 hydroxyl groups per molecule; and from 40 to 90% by weight of a difunctional hardener; and, combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a polishing layer from the product; and, forming the chemical mechanical polishing felt with the polishing layer.
    [0008]
    The method of claim 7 further comprising: providing a plurality of microelements wherein the plurality of microelements are combined with the isocyanate-terminated urethane prepolymer and the hardener system to form the combination.
    [0009]
    9. A method of polishing a substrate, characterized in that it comprises: providing a chemical-mechanical polishing apparatus 35 having a disk; providing at least one substrate; providing a chemical mechanical polishing felt according to claim 1; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate.
    [0010]
    10. The method of claim 9, characterized in that the at least one substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.
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    同族专利:
    公开号 | 公开日
    US20190308294A1|2019-10-10|
    US20150306731A1|2015-10-29|
    JP2015208854A|2015-11-24|
    DE102015004786A1|2015-10-29|
    FR3020296B1|2018-09-28|
    TWI577706B|2017-04-11|
    KR20150123728A|2015-11-04|
    TW201605919A|2016-02-16|
    CN105014528A|2015-11-04|
    JP6563675B2|2019-08-21|
    CN105014528B|2018-09-25|
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    优先权:
    申请号 | 申请日 | 专利标题
    US14261893|2014-04-25|
    US14/261,893|US20150306731A1|2014-04-25|2014-04-25|Chemical mechanical polishing pad|
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